Ferromagnetism and spin dynamics in III1-xMnxV alloys

Abstract

We describe the physical properties of ferromagnetic (FM) III-Mn-V semiconductor alloys, using GaMnAs as an example. We discuss the mechanism that causes these alloys to be FM, along with their method of fabrication; and we show how growth procedures affect the Curie temperature of these alloys. We then focus on selected new developments in FM semiconductors, including recent achievements in magneto-optics in GaMnAs; in the formation of multiple domains in this material during magnetization reversal; and in spin dynamics. All these features shed important light on the prospects of using III-Mn-V FM semiconductors as active components in spin-electronic devices.