N.P. Khuchua (Research and Production Complex (RPC) Electron Technology, Institute of Applied Semiconductor Technology, Iv. Javakhishvili State University, Tbilisi, Georgia, Georgia)
N.D. Dolidze (Institute of Micro- and Nanoelectronics, Tbilisi, Georgia, Georgia)
N.G. Gapishvili (Institute of Micro- and Nanoelectronics, Tbilisi, Georgia, Georgia)
R.G. Gulyaev (Institute of Micro- and Nanoelectronics, Tbilisi, Georgia, Georgia)
Z.V. Jibuti (Institute of Micro- and Nanoelectronics, Tbilisi, Georgia, Georgia)
R.G. Melkadze (Research and Production Complex (RPC) Electron Technology, Institute of Applied Semiconductor Technology, Iv. Javakhishvili State University, Tbilisi, Georgia, Georgia)
M.G. Tigishvili (Research and Production Complex (RPC) Electron Technology, Institute of Applied Semiconductor Technology, Iv. Javakhishvili State University, Tbilisi, Georgia, Georgia)
