Effect of CNT doping on optical properties of Cu5Se75Ge10In10 glassy alloys

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Published Jul 5, 2019
Citation Analysis

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Surabhi Mishra
Amorphous Semiconductor Research Laboratory, Department of Physics and Material Science, Madan Mohan Malaviya University of Technology, Gorakhpur, 273010, India
Priyanka Jaiswal
Amorphous Semiconductor Research Laboratory, Department of Physics and Material Science, Madan Mohan Malaviya University of Technology, Gorakhpur, 273010, India
Pravin Kumar Singh
Amorphous Semiconductor Research Laboratory, Department of Physics and Material Science, Madan Mohan Malaviya University of Technology, Gorakhpur, 273010, India
Pooja Lohia
Department of Electronics and Communication Engineering, Madan Mohan Malaviya University of Technology, Gorakhpur, 273010, India
D.K. Dwivedi
Amorphous Semiconductor Research Laboratory, Department of Physics and Material Science, Madan Mohan Malaviya University of Technology, Gorakhpur, 273010, India

Abstract

Chalcogenide glasses of bulk Cu-Se-Ge-In with 1 wt% CNT were synthesized by melt-quench technique. Thin films of as-prepared and with 1 wt% CNT added Cu-Se-Ge-In glassy alloys were made by a thermal evaporation method. Optical properties were determined using a UV-vis spectrophotometer. The absorption (extinction) coefficient decreased with addition of CNT while the optical bandgap increased from 1.9 to 2.1 eV. The greater optical bandgap found in CNT-doped Cu-Se-Ge-In is explained on the basis of the Mott–Davis model of density of defect states.

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Issue
Vol. 15 No. 2 (2019)
Section
Articles