Field emission study of nanocrystalline diamond films using STM
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Published
Mar 15, 2022
Keywords
microwave PECVD, scanning tunneling microscopy
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Rishi Sharma
Plasma Thin Film Laboratory, Department of Physics, Birla Institute of Technology, Mesra, Ranchi, India
Vikash Kumar
Plasma Thin Film Laboratory, Department of Physics, Birla Institute of Technology, Mesra, Ranchi, India
Vijay Chatterjee
Optoelectronics and MOEMS group, CSIR Central Electronics Engineering Research Institute, Pilani, India
N. Woehrl
Thin Film Technology Group, Faculty of Physics and CENIDE, University of Duisburg-Essen, Duisburg, Germany
Volker Buck
Thin Film Technology Group, Faculty of Physics and CENIDE, University of Duisburg-Essen, Duisburg, Germany
Abstract
A field emission study of nanocrystalline diamond (NCD) films, synthesized using microwave plasma-enhanced chemical vapour deposition, has been carried out. Films were deposited from an Ar/H2/CH4 plasma at 200 mbar and 600 oC on n-type (100) silicon wafers with microwave power varying from 600 to 1600 W. Raman and FTIR spectra and XRD confirmed the formation of NCD. Surface morphology was examined using AFM in lateral force mode. Field emission was studied using scanning tunneling microscopy. Variations in emission current were related to grain size variation and the complex grain boundaries within the NCD films.