Obtaining p-type ZnO films by the RBQE method

Abstract

We have investigated ZnO layers obtained by the radical beam quasi epitaxy (RBQE) method. p-type ZnO epitaxial layers were obtained at T = 400 °C, and Hall effect measurements carried out at T = 77 K and 300 K, at which the resistivity was measured as ρ = 5 × 10–2 and 3.1 × 10–3 Ω cm respectively. At T = 77 K, the hole concentration and mobility was 5 × 1018 cm–3 and 22 cm2 V–1s–1, respectively, becoming 8 × 1018 cm–3 and 250 cm2 V–1s–1 at T = 300 K. In the photoluminescence (PL) spectra of p-type ZnO layers bands were observed and identified at λ = 369.1 nm, λ = 374.5 nm, λ = 383.5 nm, λ = 392.5 nm and λ = 401 nm (at 70 K). It is shown that RBQE technology yields highly monocrystalline ZnO samples with a low concentration of uncontrollable impurities.